AAT9513 28v n-channel power mosfet preliminary information 9513.2003.06.0.61 1 general description the AAT9513 is a low threshold mosfet designed for the battery, cell phone, and pda mar- kets. using analogictech?'s ultra high density mosfet process and space saving small outline j-lead package, performance superior to that nor- mally found in a tsop-6 footprint has been squeezed into the footprint of a sc70 package. applications ? battery packs ? cellular & cordless telephones ? battery-powered portable equipment features ?v ds(max) = 28v ?i d(max) 1 = 3.7a @ 25c ? low r ds(on) : ? 65 m ? @ v gs = 4.5v ? 105 m ? @ v gs = 2.5v sc70jw-8 package dddd sssg top view 1234 8765 absolute maximum ratings (t a =25c unless otherwise noted) thermal characteristics symbol description typ max units r ja junction-to-ambient steady state 1 107 130 c/w r ja2 junction-to-ambient t<5 seconds 1 68 83 c/w r jf junction-to-foot 1 40 48 c/w symbol description value units v ds drain-source voltage 28 v v gs gate-source voltage 12 i d continuous drain current @ t j =150 c 1 t a = 25c 3.7 t a = 70c 3.0 a i dm pulsed drain current 2 12 i s continuous source current (source-drain diode) 1 1.2 p d maximum power dissipation 1 t a = 25c 1.5 w t a = 70c 0.9 t j , t stg operating junction and storage temperature range -55 to 150 c
electrical characteristics (t j =25c unless otherwise noted) note 1: based on thermal dissipation from junction to ambient while mounted on a 1? x 1? pcb with optimized layout. a 5 second pulse on a 1? x 1? pcb approximates testing a device mounted on a large multi-layer pcb as in many applications. r jf + r fa = r ja where the foot thermal reference is defined as the normal solder mounting surface of the device?s leads. r jf is guaranteed by design; however, r fa is determined by pcb design. actual maximum continuous current is limited by the application?s design. note 2: pulse test: pulse width = 300 s. note 3: guaranteed by design. not subject to production testing. symbol description conditions min typ max units dc characteristics bv dss drain-source breakdown voltage v gs =0v, i d =250a 28 v r ds(on) drain-source on-resistance 2 v gs =4.5v, i d =3.7a 52 65 m ? v gs =2.5v, i d =2.9a 82 105 i d(on) on-state drain current 2 v gs =4.5v, v ds =5v (pulsed) 12 a v gs(th) gate threshold voltage v gs =v ds , i d =250a 0.6 v i gss gate-body leakage current v gs =12v, v ds =0v 100 na i dss drain source leakage current v gs =0v, v ds =28v 1 a v gs =0v, v ds =23v, t j =70c 5 g fs forward transconductance 2 v ds =5v, i d =3.7a 3 s dynamic characteristics 3 q g total gate charge v ds =15v, r d =5.1 ? , v gs =4.5v 3.6 q gs gate-source charge v ds =15v, r d =5.1 ? , v gs =4.5v 0.6 nc q gd gate-drain charge v ds =15v, r d =5.1 ? , v gs =4.5v 0.8 t d(on) turn-on delay v dd =15v, v gs =4.5v, r d =3.7 ? , r g =6 ? 5 t r turn-on rise time v dd =15v, v gs =4.5v, r d =3.7 ? , r g =6 ? 3 ns t d(off) turn-off delay v dd =15v, v gs =4.5v, r d =3.7 ? , r g =6 ? 25 t f turn-off fall time v dd =15v, v gs =4.5v, r d =3.7 ? , r g =6 ? 7 source-drain diode characteristics v sd source-drain forward voltage 2 v gs =0, i s =3.7a 1.4 v i s continuous diode current 1 1.2 a AAT9513 28v n-channel power mosfet 2 9513.2003.06.0.61
typical characteristics t j ( c) v gs(th) variance (v) threshold voltage -0.6 -0.4 -0.2 0 0.2 0.4 -50 -25 0 25 50 75 100 125 150 i d = 250 a t j ( c) normalized r ds(on) on-resistance vs. junction temperature 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 v gs = 4.5v i d = 3.7a on-resistance vs. gate to source voltage v gs (v) r ds(on) (m ? ? ) 0 0.05 0.1 0.15 0.2 0.25 012345 i d = 3.7a on-resistance vs. drain current i d (a) r ds(on) (m ? ? ) 0 0.05 0.1 0.15 0.2 02 46 81012 v gs = 4.5v v gs = 2.5v transfer characteristics v gs (v) i d (a) 0 3 6 9 12 01 3 4 2 -55 c 25 c 125 c v d = v g output characteristics v ds (v) i ds (a) 0 4 8 12 0 0.5 1 1.5 2 2v 3v 4v 5v 1.5v 2.5v 3.5v 4.5v AAT9513 28v n-channel power mosfet 9513.2003.06.0.61 3
AAT9513 28v n-channel power mosfet 4 9513.2003.06.0.61 typical characteristics capacitance v ds (v) capacitance (pf) c iss c oss c rss 0 150 300 450 600 0 5 10 15 20 25 30 source-drain diode forward voltage v sd (v) i s (a) 0.1 1 10 100 0 0 .2 0.4 0 .6 0.8 1 1.2 t j = 150 c t j = 25 c gate charge q g , charge (nc) v gs (v) 0 1 2 3 4 5 01 23 4 v d = 15v i d = 2.95a
ordering information note: sample stock is generally held on all part numbers listed in bold . note 1: xyy = assembly and date code. package information sc70jw-8 all dimensions in millimeters. 0.225 0.075 0.45 0.10 0.05 0.05 2.10 0.30 2.00 0.20 7 3 4 4 1.75 0.10 0.85 0.15 0.15 0.05 1.10 max 0.100 2.20 0.20 0.048ref 0.50 bsc 0.50 bsc 0.50 bsc package marking 1 part number (tape and reel) sc70jw-8 guxyy AAT9513ijs-t1 AAT9513 28v n-channel power mosfet 9513.2003.06.0.61 5
AAT9513 28v n-channel power mosfet 6 9513.2003.06.0.61 advanced analogic technologies, inc. 830 e. arques avenue, sunnyvale, ca 94085 phone (408) 737-4600 fax (408) 737-4611 analogictech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an analogictech pr oduct. no circuit patent licenses, copyrights, mask work rights, or other intellectual property rights are implied. analogictech reserves the right to make changes to their products or specifications or to discontinue any product or service wi thout notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. all products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of l iability. analogictech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accorda nce with analogictech?s standard warranty. testing and other quality control techniques are utilized to the extent analogictech deems necessary to support this warranty. specific tes ting of all parameters of each device is not necessarily performed.
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